101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate" /> 101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate" /> 101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate" /> Monolithic semi-polar (1<span style="text-decoration: overline">1</span>01) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (8): 087802    DOI: 10.1088/1674-1056/28/8/087802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
Qi Wang(王琦)1,2, Guo-Dong Yuan(袁国栋)1,2, Wen-Qiang Liu(刘文强)1,2, Shuai Zhao(赵帅)1,2, Lu Zhang(张璐)1,2, Zhi-Qiang Liu(刘志强)1,2, Jun-Xi Wang(王军喜)1,2, Jin-Min Li(李晋闽)1,2
1 Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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