| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions |
| Xiuqing Meng(孟秀清), Shulin Chen(陈书林), Yunzhang Fang(方允樟), Jianlong Kou(寇建龙) |
| Zhejiang Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China |
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Abstract Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices. In this paper, we report the fabrication and optical investigation of large-scale chemical vapor deposition (CVD)-grown monolayer MoS2 and exfoliated few-layer GaS heterojunctions. As revealed by photoluminescence (PL) characterization, the as-fabricated heterojunctions demonstrated edge interaction between the two layers. The heterojunction was sensitive to annealing and showed increased interaction upon annealing at 300 °C under vacuum conditions, which led to changes in both the emission peak position and intensity resulting from the strong coupling interaction between the two layers. Low-temperature PL measurements further confirmed the strong coupling interaction. In addition, defect-related GaS luminescence was observed in our few-layer GaS, and the PL mapping provided evidence of edge interaction coupling between the two layers. These findings are interesting and provide the basis for creating new material systems with rich functionalities and novel physical effects.
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Received: 11 March 2019
Revised: 12 April 2019
Accepted manuscript online:
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PACS:
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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78.55.-m
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(Photoluminescence, properties and materials)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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68.03.Cd
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(Surface tension and related phenomena)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11104250, 61274099, and 11774313), the Science Technology Department of Zhejiang Province, China (Grant No. 2012C21007), Zhejiang Province Innovation Team, China (Grant No. 2011R50012), and Zhejiang Provincial Natural Science Foundation, China (Grant No. LY17A040003). |
Corresponding Authors:
Xiuqing Meng
E-mail: xqmeng@zjnu.cn
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Cite this article:
Xiuqing Meng(孟秀清), Shulin Chen(陈书林), Yunzhang Fang(方允樟), Jianlong Kou(寇建龙) Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions 2019 Chin. Phys. B 28 078101
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