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Chin. Phys. B, 2019, Vol. 28(7): 074702    DOI: 10.1088/1674-1056/28/7/074702
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Direct simulation Monte Carlo study of metal evaporation with collimator in e-beam physical vapor deposition

Xiaoyong Lu(卢肖勇)1,2, Junjie Chai(柴俊杰)2
1 Department of Engineering Physics, Tsinghua University, Beijing 100084, China;
2 Research Institute of Physics and Chemical Engineering of Nuclear Industry, Tianjin 300180, China
Abstract  

The flow properties and substrate deposition rate profile, which are the important parameters in electron beam physical vapor deposition, are investigated computationally in this article. Collimators are used to achieve the desired vapor beam and deposition rate profile in some applications. This increases the difficulty measuring boundary conditions and the size of the liquid metal pool inside the collimators. It is accordingly hard to obtain accurate results from numerical calculations. In this article, two-dimensional direct simulation Monte Carlo (DSMC) codes are executed to quantify the influence of uncertainties of boundary conditions and pool sizes. Then, three-dimensional DSMC simulations are established to simulate cerium and neodymium evaporation with the collimator. Experimental and computational results of substrate deposition rate profile are in excellent agreement at various evaporation rates and substrate heights. The results show that the DSMC method can assist in metal evaporation with a collimator.

Keywords:  metal evaporation      collimator      deposition thickness profile  
Received:  11 January 2019      Revised:  27 March 2019      Accepted manuscript online: 
PACS:  47.45.-n (Rarefied gas dynamics)  
  51.10.+y (Kinetic and transport theory of gases)  
Corresponding Authors:  Xiaoyong Lu     E-mail:  lu-xy15@mails.tsinghua.edu.cn

Cite this article: 

Xiaoyong Lu(卢肖勇), Junjie Chai(柴俊杰) Direct simulation Monte Carlo study of metal evaporation with collimator in e-beam physical vapor deposition 2019 Chin. Phys. B 28 074702

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