Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (6): 068504    DOI: 10.1088/1674-1056/28/6/068504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Zheng-Xin Wen(温正欣)1,2, Feng Zhang(张峰)1,2,3, Zhan-Wei Shen(申占伟)1, Jun Chen(陈俊)1,2, Ya-Wei He(何亚伟)1,2, Guo-Guo Yan(闫果果)1, Xing-Fang Liu(刘兴昉)1, Wan-Shun Zhao(赵万顺)1, Lei Wang(王雷)1, Guo-Sheng Sun(孙国胜)1,2, Yi-Ping Zeng(曾一平)1,2
1 Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Physics, Xiamen University, Xiamen 361005, China

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