Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (6): 067304    DOI: 10.1088/1674-1056/28/6/067304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
Si-Qin-Gao-Wa Bao(包斯琴高娃)1,2,3, Xiao-Hua Ma(马晓华)1,2, Wei-Wei Chen(陈伟伟)4, Ling Yang(杨凌)1,2, Bin Hou(侯斌)1,2, Qing Zhu(朱青)1,2, Jie-Jie Zhu(祝杰杰)1,2, Yue Hao(郝跃)2
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
3 School of Science, Inner Mongolia University of Technology, Hohhot 010051, China;
4 China Academy of Space Technology(Xi'an), Xi'an 710071, China

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