Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (6): 067302    DOI: 10.1088/1674-1056/28/6/067302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons
Yan Liu(刘岩)1,2, Wei Chen(陈伟)2, Chaohui He(贺朝会)1, Chunlei Su(苏春垒)2, Chenhui Wang(王晨辉)2, Xiaoming Jin(金晓明)2, Junlin Li(李俊霖)2, Yuanyuan Xue(薛院院)2
1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Northwest Institute of Nuclear Technology), Xi'an 710024, China

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