Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (5): 058502    DOI: 10.1088/1674-1056/28/5/058502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
Guang Li(李光)1, Lin-Yuan Wang(王林媛)1, Wei-Dong Song(宋伟东)1, Jian Jiang(姜健)1, Xing-Jun Luo(罗幸君)1, Jia-Qi Guo(郭佳琦)1, Long-Fei He(贺龙飞)1,2, Kang Zhang(张康)2, Qi-Bao Wu(吴启保)3, Shu-Ti Li(李述体)1
1 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
2 Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China;
3 School of Intelligent Manufacture and Equipment, Shenzhen Institute of Information Technology, Shenzhen 518172, China

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