Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (5): 058501    DOI: 10.1088/1674-1056/28/5/058501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
Zhi-Feng Tian(田志锋)1,2,3,5, Peng Xu(徐鹏)1,4, Yao Yu(余耀)1,5, Jian-Dong Sun(孙建东)1, Wei Feng(冯伟)1,6, Qing-Feng Ding(丁青峰)1,2, Zhan-Wei Meng(孟占伟)1,4, Xiang Li(李想)1,6, Jin-Hua Cai(蔡金华)1, Zhong-Xin Zheng(郑中信)7, Xin-Xing Li(李欣幸)1, Lin Jin(靳琳)1, Hua Qin(秦华)1,2,5, Yun-Fei Sun(孙云飞)8
1 Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 200000, China;
3 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200000, China;
4 Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China;
5 University of Chinese Academy of Sciences, Beijing 100049, China;
6 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
7 Beijing Huahang Radio Measurement & Research Institute, Beijing 100013, China;
8 College of Electronic and Information Engineering, Suzhou University of Sciences and Technology, Suzhou 215009, China

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