Delta-doped quantum wire tunnel junction for highly concentrated solar cells

doi:10.1088/1674-1056/28/4/046102

Abstract

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration. The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

Keywords: delta-doping quantum wire solar cell tunnel junction

Received: 02 December 2018
Revised: 15 February 2019
Accepted manuscript online:

PACS:	61.72.-y	(Defects and impurities in crystals; microstructure)
	68.65.La	(Quantum wires (patterned in quantum wells))
	88.40.H-	(Solar cells (photovoltaics))
	73.43.Jn	(Tunneling)

Corresponding Authors: Ali Bahrami
E-mail: bahrami@sut.ac.ir

Cite this article:

Ali Bahrami, Mahyar Dehdast, Shahram Mohammadnejad, Habib Badri Ghavifekr Delta-doped quantum wire tunnel junction for highly concentrated solar cells 2019 Chin. Phys. B 28 046102

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