Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2019, Vol. 28 Issue (3): 038503    DOI: 10.1088/1674-1056/28/3/038503
SPECIAL TOPIC—Photodetector: Materials, physics, and applications Current Issue| Next Issue| Archive| Adv Search |
High performance lateral Schottky diodes based on quasi-degenerated Ga2O3
Yang Xu(徐阳)1, Xuanhu Chen(陈选虎)1, Liang Cheng(程亮)1, Fang-Fang Ren(任芳芳)1,2,3, Jianjun Zhou(周建军)4, Song Bai(柏松)4, Hai Lu(陆海)1, Shulin Gu(顾书林)1,2, Rong Zhang(张荣)1,2, Youdou Zheng(郑有炓)1,2, Jiandong Ye(叶建东)1,2,3
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;
3 Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China;
4 State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail:
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: