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High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy |
| Fa-Ran Chang(常发冉)1, Rui-Ting Hao(郝瑞亭)1, Tong-Tong Qi(齐通通)1, Qi-Chen Zhao(赵其琛)1, Xin-Xing Liu(刘欣星)1, Yong Li(李勇)1, Kang Gu(顾康)1, Jie Guo(郭杰)1, Guo-Wei Wang(王国伟)2,3, Ying-Qiang Xu(徐应强)2,3, Zhi-Chuan Niu(牛智川)2,3 |
1 School of Energy & Environment Science, Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Ministry of Education, Yunnan Key Laboratory of Opto-electronic Information Technology, Yunnan Normal University, Kunming 650092, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract In this paper, high material quality Al0.4In0.6AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared (FTIR) spectrometer, and atomic force microscope (AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 Å (theoretical value is 30.48 Å), the mismatch between the GaSb substrate and AlInAsSb achieves -162 arcsec, and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 Å over an area of 10 μm×10 μm. At room temperature, the photoluminescence (PL) spectrum shows a cutoff wavelength of 1.617 μm.
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Received: 11 September 2018
Revised: 26 November 2018
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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68.65.Cd
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(Superlattices)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130 11474248, 61176127, 61006085, 61274013, and 61306013, the Key Program for International Science and Technology Cooperation Projects of China (Grant No. 2011DFA62380), and the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20105303120002). |
Corresponding Authors:
Rui-Ting Hao, Jie Guo, Guo-Wei Wang
E-mail: ruitinghao@semi.ac.cn;jieggg1020@sina.com;wangguowei@semi.ac.cn
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Cite this article:
Fa-Ran Chang(常发冉), Rui-Ting Hao(郝瑞亭), Tong-Tong Qi(齐通通), Qi-Chen Zhao(赵其琛), Xin-Xing Liu(刘欣星), Yong Li(李勇), Kang Gu(顾康), Jie Guo(郭杰), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy 2019 Chin. Phys. B 28 028503
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