Synthesis and characterization of β-Ga2O3@GaN nanowires

doi:10.1088/1674-1056/28/2/028104

Abstract

In this work, we prepared the β-Ga₂O₃@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga₂O₃ was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.

Keywords: β-Ga₂O₃@GaN nanowires thermal oxidation

Received: 12 November 2018
Revised: 09 December 2018
Accepted manuscript online:

PACS:	81.16.-c	(Methods of micro- and nanofabrication and processing)
	81.07.Gf	(Nanowires)
	81.16.Pr	(Micro- and nano-oxidation)

Fund:

Project supported by National Key Research and Development Program of China (Grant No. 2017YFB0404201), State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting & Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Corresponding Authors: Xiang-Qian Xiu, Zi-Li Xie, Rong Zhang
E-mail: xqxiu@nju.edu.cn;xzl@nju.edu.cn;rzhang@nju.edu.cn

Cite this article:

Shuang Wang(王爽), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Li-Ying Zhang(张丽颖), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Bin Liu(刘斌), Peng Chen(陈鹏), Rong Zhang(张荣), You-Dou Zheng(郑有炓) Synthesis and characterization of β-Ga₂O₃@GaN nanowires 2019 Chin. Phys. B 28 028104

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Synthesis and characterization of β-Ga2O3@GaN nanowires

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Synthesis and characterization of β-Ga₂O₃@GaN nanowires