Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (2): 027301    DOI: 10.1088/1674-1056/28/2/027301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
Sheng-Lei Zhao(赵胜雷)1, Zhi-Zhe Wang(王之哲)2, Da-Zheng Chen(陈大正)1, Mao-Jun Wang(王茂俊)3, Yang Dai(戴扬)4, Xiao-Hua Ma(马晓华)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3 Institute of Microelectronics, Peking University, Beijing 100871, China;
4 School of Information Science and Technology, Northwest University, Xi'an 710127, China

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