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Special Issue:
SPECIAL TOPIC — Photodetector: Materials, physics, and applications
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| SPECIAL TOPIC—Photodetector: Materials, physics, and applications |
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Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers |
| Xia Wang(王霞)1,2, Zhen-Ping Wu(吴真平)1,2, Wei Cui(崔尉)1,2, Yu-Song Zhi(支钰崧)1,2, Zhi-Peng Li(李志鹏)3, Pei-Gang Li(李培刚)1,2, Dao-You Guo(郭道友)4, Wei-Hua Tang(唐为华)1,2 |
1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100876, China;
4 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China |
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Abstract Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga2O3 thin films using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. The obtained Ga2O3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga2O3 solar-blind UV photodetector was fabricated by transferring the free-standing Ga2O3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga2O3 photodetector were not sensitive to bending of the device. The free-standing Ga2O3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
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Received: 08 October 2018
Revised: 07 November 2018
Accepted manuscript online:
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PACS:
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73.22.Pr
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(Electronic structure of graphene)
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67.30.hr
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(Films)
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71.20.Nr
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(Semiconductor compounds)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 51572241, 61774019, 61704153, and 11404029), the Fund of State Key Laboratory of IPOC (BUPT), and the Open Fund of IPOC (BUPT), Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04). |
Corresponding Authors:
Wei-Hua Tang
E-mail: whtang@bupt.edu.cn
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Cite this article:
Xia Wang(王霞), Zhen-Ping Wu(吴真平), Wei Cui(崔尉), Yu-Song Zhi(支钰崧), Zhi-Peng Li(李志鹏), Pei-Gang Li(李培刚), Dao-You Guo(郭道友), Wei-Hua Tang(唐为华) Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers 2019 Chin. Phys. B 28 017305
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