Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (1): 017105    DOI: 10.1088/1674-1056/28/1/017105
TOPICAL REVIEW—Photodetector: materials, physics, and applications Current Issue| Next Issue| Archive| Adv Search |
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Zeng Liu(刘增)1,2, Pei-Gang Li(李培刚)1,2, Yu-Song Zhi(支钰崧)1,2, Xiao-Long Wang(王小龙)1,2, Xu-Long Chu(褚旭龙)1,3, Wei-Hua Tang(唐为华)1,2
1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 China Aerospace Academy of Systems Science and Engineering, Beijing 100048, China

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