Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (1): 017104    DOI: 10.1088/1674-1056/28/1/017104
TOPICAL REVIEW—Photodetector: materials, physics, and applications Current Issue| Next Issue| Archive| Adv Search |
Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications
Fang-Yu Yue(越方禹)1, Su-Yu Ma(马骕驭)1, Jin Hong(洪进)1, Ping-Xiong Yang(杨平雄)1, Cheng-Bin Jing(敬承斌)1, Ye Chen(陈晔)1, Jun-Hao Chu(褚君浩)1,2
1 Key Laboratory of Polar Materials and Devices(MOE), Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China;
2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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