Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas

doi:10.1088/1674-1056/27/12/127805

Abstract

Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture (PPM) of N₂ and H₂ carrier gas. Photoluminescence, optical transmission, reciprocal space map and space-resolved cathodoluminescence are employed to characterize the InGaN epilayers. It is shown that the lateral In-fluctuations mainly occur as hillock-like In-rich regions. Both the number and size of In-rich regions are reduced by introducing the PPM carrier gas. Moreover, the measurements first experimentally demonstrate that the H₂ carrier gas has a stronger decomposition effect on the In-rich region. As the duration time of the PPM carrier gas increases, the reduction of In-content in the In-rich region reaches up to 12%, however, only 2% for the In-homogeneous region. These factors lead to the suppression of In-fluctuations.

Keywords: InGaN alloys suppression of In-fluctuations periodically-pulsed mixture of nitrogen and hydrogen

Received: 04 July 2018
Revised: 16 September 2018
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund:

Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Corresponding Authors: Hao Jiang
E-mail: stsjiang@mail.sysu.edu.cn

Cite this article:

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏) Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas 2018 Chin. Phys. B 27 127805

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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas

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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas