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Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO |
| Ai-Hua Tang(汤爱华)1,2, Zeng-Xia Mei(梅增霞)1, Yao-Nan Hou(侯尧楠)1, Xiao-Long Du(杜小龙)1,2 |
1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract The wide-band-gap II-VI compound semiconductor ZnO is regarded as a promising single-photon emission (SPE) host material. In this work, we demonstrate that a (GaZn-VZn)- complex defect can readily be obtained and the density can be controlled in a certain range. In analogy to nitrogen vacancy centers, such a defect in ZnO is expected to be a new single photon source. The optical properties of the (GaZn-VZn)- complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements. The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10-20 nanoseconds, indicating a good coherent length for SPE. Finally, a two-level emitter structure is proposed to explain the carrier dynamics. We believe that the photodynamics study of the (GaZn-VZn)- complex defect in this work is important for ZnO-based quantum emitters.
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Received: 22 May 2018
Revised: 02 September 2018
Accepted manuscript online:
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PACS:
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78.55.-m
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(Photoluminescence, properties and materials)
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71.55.-i
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(Impurity and defect levels)
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78.55.Et
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(II-VI semiconductors)
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61.72.J-
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(Point defects and defect clusters)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280). |
Corresponding Authors:
Zeng-Xia Mei, Xiao-Long Du
E-mail: zxmei@iphy.ac.cn;xldu@iphy.ac.cn
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Cite this article:
Ai-Hua Tang(汤爱华), Zeng-Xia Mei(梅增霞), Yao-Nan Hou(侯尧楠), Xiao-Long Du(杜小龙) Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO 2018 Chin. Phys. B 27 117802
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