Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

doi:10.1088/1674-1056/27/9/097104

Abstract

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multi-quantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.

Keywords: multiple quantum wells p-n junction light-to-electricity photocurrent

Received: 25 May 2018
Revised: 18 June 2018
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	72.40.+w	(Photoconduction and photovoltaic effects)
	73.21.Fg	(Quantum wells)
	73.63.Hs	(Quantum wells)

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Corresponding Authors: Hong Chen
E-mail: hchen@iphy.ac.cn

Cite this article:

Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction 2018 Chin. Phys. B 27 097104

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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

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