Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (9): 098501    DOI: 10.1088/1674-1056/27/9/098501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
Jin-Shun Bi(毕津顺)1,2, Kai Xi(习凯)1, Bo Li(李博)1, Hai-Bin Wang(王海滨)3, Lan-Long Ji(季兰龙)1, Jin Li(李金)1, Ming Liu(刘明)1
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Internet of Things Engineering, Hohai University, Changzhou 213022, China

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