Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2018, Vol. 27 Issue (9): 097309    DOI: 10.1088/1674-1056/27/9/097309
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
Sheng Zhang(张昇)1,2, Ke Wei(魏珂)2, Yang Xiao(肖洋)1, Xiao-Hua Ma(马晓华)1, Yi-Chuan Zhang(张一川)2, Guo-Guo Liu(刘果果)2, Tian-Min Lei(雷天民)1, Ying-Kui Zheng(郑英奎)2, Sen Huang(黄森)2, Ning Wang(汪宁)2, Muhammad Asif2, Xin-Yu Liu(刘新宇)2
1 School of Advanced Materials and Nanotechnology, Xi'dian University, Xi'an 710071, China;
2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn