Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (8): 087308    DOI: 10.1088/1674-1056/27/8/087308
SPECIAL TOPIC—Nanophotonics Current Issue| Next Issue| Archive| Adv Search |
Black phosphorus-based field effect transistor devices for Ag ions detection
Hui-De Wang(王慧德)1, David K Sang1, Zhi-Nan Guo(郭志男)1, Rui Cao(曹睿)1,2, Jin-Lai Zhao(赵劲来)2, Muhammad Najeeb Ullah Shah1, Tao-Jian Fan(范涛健)1, Dian-Yuan Fan(范滇元)1, Han Zhang(张晗)1
1 Shenzhen Key Laboratory of Two-Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
2 Faculty of Information Technology, Macau University of Science and Technology, Macao, China

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