Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

doi:10.1088/1674-1056/27/8/088502

Abstract A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves (HPM) is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.

Keywords: monolithic composite transistor high-power microwaves damage effects pulse-width effects

Received: 26 March 2018
Revised: 14 May 2018
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Corresponding Authors: Hui Li
E-mail: huili_xidian@163.com

Cite this article:

Hui Li(李慧), Chang-Chun Chai(柴常春), Yu-Qian Liu(刘彧千), Han Wu(吴涵), Yin-Tang Yang(杨银堂) Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves 2018 Chin. Phys. B 27 088502

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Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

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