Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (8): 087701    DOI: 10.1088/1674-1056/27/8/087701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮)
School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic, Communication Devices, Tianjin University of Technology, Tianjin, China

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