Similarity principle of microwave argon plasma at low pressure

doi:10.1088/1674-1056/27/8/085206

Abstract In order to validate the similarity principle of microwave breakdown, a two-dimensional (2D) fluid model of low-pressure microwave argon plasma is established and solved by the finite-element method. Proportional conditions are used in this model to build three different breakdown processes that meet the premise of a similarity principle, and these breakdown processes are called “similar cases” in this paper. Similar cases have proportionately sized breakdown regions, where the ratio of frequency of incident microwave f to gas pressure p (f/p), and the reduced field E/p in them are kept the same. All the important physical parameters such as electron density, electron temperature, and reduced electric field can be obtained from the simulation of this model. The results show that the parameters between similar cases are in constant ratio without changing with time, which means that the similarity principle is also valid in microwave breakdown.

Keywords: similarity principle microwave plasma low pressure 2D fluid model

Received: 27 February 2018
Revised: 01 April 2018
Accepted manuscript online:

PACS:	52.80.Pi	(High-frequency and RF discharges)
	52.65.-y	(Plasma simulation)
	51.50.+v	(Electrical properties)
	52.50.Sw	(Plasma heating by microwaves; ECR, LH, collisional heating)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61331002), the National Key Basic Research Program of China (Grant No. 2013CB328903), and the Fundamental Research Funds for the Central Universities, China (Grant No. W15JB00510).

Corresponding Authors: Jun-Hong Wang
E-mail: wangjunh@bjtu.edu.cn

Cite this article:

Xiao-Yu Han(韩晓宇), Jun-Hong Wang(王均宏), Mei-E Chen(陈美娥), Zhan Zhang(张展), Zheng Li(李铮), Yu-Jian Li(李雨键) Similarity principle of microwave argon plasma at low pressure 2018 Chin. Phys. B 27 085206

[1]	Bittencourt J A 1986 Int. J. Opt. 28 881
[2]	Townsend J S 1915 Electricity in Gases (Oxford: Clarendon Press)
[3]	Osmokrovic P 2006 Plasma Sources Sci. Technol. 15 703
[4]	Dekić S, Osmokrović P, Vujisić M and Stanković K 2010 IEEE Trans. Dielectr. Electr. Insul. 17 1185
[5]	Paschen F 1889 Ann. Phys. 273 69
[6]	Holm R 1924 Phys. Z. 25 497
[7]	Margenau H 1948 Phys. Rev. 73 326
[8]	Jones F L and Morgan G D 1951 Proc. Phys. Soc., London, Sect. B 64 560
[9]	Fu Y Y, Luo H Y, Zou X B, Wang X X 2014 IEEE Trans. Plasma Sci. 42 1544
[10]	Mezei P, Cserfalvi T, Jánossy M, Szöcs K and Kim H J 1999 J. Phys. D: Appl. Phys. 31 2818
[11]	Vitruk P P, Baker H J and Hall D R 1994 IEEE J. Quantum Electron. 30 1623
[12]	Mesyats G 2006 Phys. Usp. 49 1045
[13]	Mesyats G A 2006 JEPT Lett. 83 19
[14]	Zhao P C, Guo L X and Shu P P 2017 Chin. Phys. B 26 029201
[15]	Fu Y Y, Yang S, Zou X B, Luo H Y and Wang X X 2016 Phys. Plasmas 23 093509
[16]	Fu Y Y, Verboncoeur J P, Christlieb A J and Wang X X 2017 Phys. Plasmas 24 83516
[17]	Ferreira C M, Alves L L, Pinheiro M and Sá A B 1991 IEEE Trans. Plasma Sci. 19 229
[18]	Hyman H A 1979 Phys. Rev. A 20 855
[19]	Roberto M, Smith H B and Verboncoeur J P 2003 IEEE Trans. Plasma Sci. 31 1292
[20]	Lieberman M A and Lichtenberg A J 2005 Principles of Plasma Discharges & Materials Processing (Chichester: John Wiley and Sons) p. 800
[21]	Fiala A, Pitchford L C and Boeuf J P 1994 Phys. Rev. E 49 5607
[22]	Yamabe C, Buckman S J and Phelps A V 1983 Phys. Rev. A 27 1345
[23]	Liu S B, Mo J J and Yuan N C 2002 Int. J. Infrared Millimeter Waves 23 1803
[24]	Kim H C and Verboncoeur J P 2007 Comput. Phys. Commun. 177 118
[25]	Fu Y Y, Parsey G M, Verboncoeur J P and Christlieb A J 2017 Phys. Plasmas 24 113518
[26]	Fu Y Y, Luo H Y, Zou X B and Wang X X 2014 Plasma Sources Sci. Technol. 23 065035

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Similarity principle of microwave argon plasma at low pressure

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