Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2018, Vol. 27 Issue (7): 078503    DOI: 10.1088/1674-1056/27/7/078503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors
Tong Zhang(张彤)1, Taofei Pu(蒲涛飞)1, Tian Xie(谢天)1, Liuan Li(李柳暗)2, Yuyu Bu(补钰煜)3, Xiao Wang(王霄)3, Jin-Ping Ao(敖金平)1,3
1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
3 School of Microelectronics, Xidian University, Xi'an 710071, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn