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Pressure-induced enhancement of optoelectronic properties in PtS2 |
| Yi-Fang Yuan(袁亦方)1,2, Zhi-Tao Zhang(张志涛)2, Wei-Ke Wang(王伟科)3, Yong-Hui Zhou(周永惠)2, Xu-Liang Chen(陈绪亮)2, Chao An(安超)2, Ran-Ran Zhang(张冉冉)2, Ying Zhou(周颖)2, Chuan-Chuan Gu(顾川川)2, Liang Li(李亮)4, Xin-Jian Li(李新建)1, Zhao-Rong Yang(杨昭荣)2,5 |
1 Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China;
2 Anhui Provincial Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China;
3 Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China;
4 State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology(HUST), Wuhan 430074, China;
5 Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China |
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Abstract PtS2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressure-dependent below 3 GPa but increases significantly in the pressure range of 3 GPa-4 GPa, with a maximum~6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to 26.8 GPa, which indicates a stable lattice structure of PtS2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.
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Received: 04 March 2018
Revised: 14 April 2018
Accepted manuscript online:
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PACS:
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62.50.-p
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(High-pressure effects in solids and liquids)
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85.60.-q
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(Optoelectronic devices)
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32.30.Rj
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(X-ray spectra)
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74.25.nd
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(Raman and optical spectroscopy)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos.2018YFA0305700 and 2016YFA0401804),the National Natural Science Foundation of China (Grant Nos.11574323,11704387,U1632275,11304321,11604340,and 61774136),the Natural Science Foundation of Anhui Province,China (Grant No.1708085QA19),and the Director's Fund of Hefei Institutes of Physical Science,Chinese Academy of Sciences (Grant No.YZJJ201621). |
Corresponding Authors:
Xin-Jian Li, Zhao-Rong Yang
E-mail: lixj@zzu.edu.cn;zryang@issp.ac.cn
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Cite this article:
Yi-Fang Yuan(袁亦方), Zhi-Tao Zhang(张志涛), Wei-Ke Wang(王伟科), Yong-Hui Zhou(周永惠), Xu-Liang Chen(陈绪亮), Chao An(安超), Ran-Ran Zhang(张冉冉), Ying Zhou(周颖), Chuan-Chuan Gu(顾川川), Liang Li(李亮), Xin-Jian Li(李新建), Zhao-Rong Yang(杨昭荣) Pressure-induced enhancement of optoelectronic properties in PtS2 2018 Chin. Phys. B 27 066201
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