Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (6): 068504    DOI: 10.1088/1674-1056/27/6/068504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
Li Wang(王黎)1,2,3, Yuan Liu(刘远)1,2,3, Kui-Wei Geng(耿魁伟)1, Ya-Yi Chen(陈雅怡)1,2, Yun-Fei En(恩云飞)2
1 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;
3 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

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