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Chin. Phys. B, 2018, Vol. 27(4): 048504    DOI: 10.1088/1674-1056/27/4/048504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li(栗旭阳)1, Zhi-Nong Yu(喻志农)1, Jin Cheng(程锦)1, Yong-Hua Chen(陈永华)1, Jian-She Xue(薛建设)2, Jian Guo(郭建)1,2, Wei Xue(薛唯)1
1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China
Abstract  In this study, indium oxide (In2O3) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (Ta ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μsat) and a negative shift in the threshold voltage (VTH). The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm2/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm2/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.
Keywords:  water-based process      alkoxide-based process      annealing temperature      thin-film transistors  
Received:  02 November 2017      Revised:  18 January 2018      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  78.40.Fy (Semiconductors)  
  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).
Corresponding Authors:  Zhi-Nong Yu     E-mail:  znyu@bit.edu.cn

Cite this article: 

Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯) Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures 2018 Chin. Phys. B 27 048504

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