Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (4): 048503    DOI: 10.1088/1674-1056/27/4/048503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Research on the radiation hardened SOI devices with single-step Si ion implantation
Li-Hua Dai(戴丽华)1,2, Da-Wei Bi(毕大炜)2, Zhi-Yuan Hu(胡志远)2, Xiao-Nian Liu(刘小年)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)2, Shi-Chang Zou(邹世昌)2
1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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