Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

doi:10.1088/1674-1056/27/4/047307

Abstract We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that the FinFET with scaled fin dimensions exhibits much flatter G_m characteristics than the one with long fins as well as planar HEMT. According to the comparative study, we provide direct proof that source resistance rather than tri-gate structure itself dominates the G_m behavior. Furthermore, power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave power application, especially high-linearity applications.

Keywords: AlGaN/GaNFinFETs output power density linearity characteristics

Received: 12 November 2017
Revised: 02 January 2018
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	52.77.Bn	(Etching and cleaning)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181).

Corresponding Authors: Kai Zhang
E-mail: haigui.34@163.com

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Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜) Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs 2018 Chin. Phys. B 27 047307

[1]	Ohi K and Hashizume T 2009 J. Appl. Phys. 48 081002
[2]	Ohi K, Asubar J T, Nishiguchi K and Hashizume T 2013 IEEE Trans. Electron Dev. 60 2997
[3]	Arulkumaran S, Ng G I, Manoj Kumar C M, Ranjan K, Teo K L, ShoronO F, Rajan S, Bin Dolmanan S and Tripathy S 2015 Appl. Phys. Lett. 106 053502
[4]	Lu B, Matioli E and Palacios T 2012 IEEE Electron Dev. Lett. 33 360
[5]	Im K S, Kim R H, Kim K W, Kim D S, Lee C S, Cristoloveanu S and Lee J H 2013 IEEE Electron Dev. Lett. 34 27
[6]	Liu S, Cai Y, Gu G, Wang J, Zeng C, Shi W, Feng Z, Qin H, Cheng Z, Chen K J and Zhang B 2012 IEEE Electron Dev. Lett. 33 354
[7]	Azize M, Hsu A L, Saadat O I, Smith M, Gao X, Guo S, Gradčak S and Palacios T 2011 IEEE Electron Dev. Lett. 32 1680
[8]	Seo J H, Jo Y W, Yoon Y J, Son D H, Won C H, Jang H S, Kang I M and Lee J H 2016 IEEE Electron Dev. Lett. 37 855
[9]	Lee D S, Wang H, Hsu A, Azize M, Laboutin O, Cao Y, Johnson J W, Beam E, Ketterson A, Schuette M L, Saunier P and Palacios T 2013 IEEE Electron Dev. Lett. 34 969
[10]	Zhang K, Kong Y, Zhu G, Zhou J, Yu X, Kong C, Li Z and Chen T 2017 IEEE Electron Dev. Lett. 38 615
[11]	Trew R J, Liu Y, Gu G, Bilbro G L, Kuang W, Vetury R and Shealy J B 2006 IEEE Trans. Microw. Theory Tech. 54 2061
[12]	Ture E, Brückner P, Godejohann B J, Aidam R, Alsharef M, Granzner R, Schwierz F, Quay R and Ambacher O 2016 IEEE J. Electron Dev. Soc. 4 1
[13]	Asubar J T, Yatabe Z and Hashizume T 2014 Appl. Phys. Lett. 105 053510
[14]	Seo J H, Jo Y W, Yoon Y J, Son D H, Won C H, Jang H S, Kang I M and Lee J H 2016 IEEE Electron Dev. Lett. 37 855

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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

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