Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2018, Vol. 27 Issue (4): 047305    DOI: 10.1088/1674-1056/27/4/047305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
Wei Mao(毛维)1, Hai-Yong Wang(王海永)1, Peng-Hao Shi(石朋毫)1, Xiao-Fei Wang(王晓飞)2, Ming Du(杜鸣)1, Xue-Feng Zheng(郑雪峰)1, Chong Wang(王冲)1, Xiao-Hua Ma(马晓华)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn