Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

doi:10.1088/1674-1056/27/4/047209

Abstract

Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs_0.91Sb_0.09 embedded in the GaSb barrier is calculated to be 0.53 eV (2.35 μm), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from 2.0 μm to 2.3 μm with a peak around 2.1 μm at 300 K. The peak responsivity is 0.4 A/W under -500 -mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10^-3 A/cm² under -400-mV applied bias voltage and 3.25×10^-5 A/cm² under zero, separately. The peak detectivity is 6.91×10¹⁰ cm·Hz^1/2/W under zero bias voltage at 300 K.

Keywords: InAsSb/GaSb quantum well interband transition photodetector room temperature operating

Received: 17 December 2017
Revised: 01 February 2018
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	81.07.St	(Quantum wells)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11574362).

Corresponding Authors: Hong Chen
E-mail: hchen@iphy.ac.cn

Cite this article:

Ling Sun(孙令), Lu Wang(王禄), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Jun Fang(方俊), Li-Li Xie(谢莉莉), Zhi-Biao Hao(郝智彪), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Hong Chen(陈弘) Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well 2018 Chin. Phys. B 27 047209

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Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

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