Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (4): 047101    DOI: 10.1088/1674-1056/27/4/047101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
Jin-Lun Li(李金伦)1,2, Shao-Hui Cui(崔少辉)1, Jian-Xing Xu(徐建星)2,4, Xiao-Ran Cui(崔晓然)2,5, Chun-Yan Guo(郭春妍)2,6, Ben Ma(马奔)2,3, Hai-Qiao Ni(倪海桥)2,3, Zhi-Chuan Niu(牛智川)2,3
1. Department of Missile Engineering, Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China;
2. State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
4. Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
5. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an 710071, China;
6. Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences, Xi'an Institute of Optics and Precision Mechanics, Xi'an 710119, China

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