Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (3): 038501    DOI: 10.1088/1674-1056/27/3/038501
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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利)
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

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