Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (2): 028502    DOI: 10.1088/1674-1056/27/2/028502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
Shu-Xiang Sun(孙树祥)1, Zhi-Chao Wei(魏志超)2, Peng-Hui Xia(夏鹏辉)1, Wen-Bin Wang(王文斌)1, Zhi-Yong Duan(段智勇)1, Yu-Xiao Li(李玉晓)1, Ying-Hui Zhong(钟英辉)1, Peng Ding(丁芃)3, Zhi Jin(金智)3
1. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2. China Academy of Space Technology, Beijing 100086, China;
3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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