Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (2): 027104    DOI: 10.1088/1674-1056/27/2/027104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures
Hao-Nan Liu(刘浩男)1, Xiao-Xia Suo(索晓霞)1, Lin-Ao Zhang(张林奥)1, Duan Zhang(张端)2, Han-Chun Wu(吴汉春)1, Hong-Kang Zhao(赵宏康)1, Zhao-Tan Jiang(江兆潭)1, Ying-Lan Li(李英兰)1, Zhi Wang(王志)1
1. School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2. Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, China

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