Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1-yAs

doi:10.1088/1674-1056/27/2/027103

Abstract Some realizable structures of double parabolic quantum wells (DPQWs) consisting of Al_xGa_1-xAs/Al_yGa_1-y As are constructed to discuss theoretically the optical absorption due to the intersubband transition of electrons for both symmetric and asymmetric cases with three energy levels of conduction bands. The electronic states in these structures are obtained using a finite element difference method. Based on a compact density matrix approach, the optical absorption induced by intersubband transition of electrons at room temperature is discussed. The results reveal that the peak positions and heights of intersubband optical absorption coefficients (IOACs) of DPQWs are sensitive to the barrier thickness, depending on Al component. Furthermore, external electric fields result in the decrease of peak, and play an important role in the blue shifts of absorption spectra due to electrons excited from ground state to the first and second excited states. It is found that the peaks of IOACs are smaller in asymmetric DPQWs than in symmetric ones. The results also indicate that the adjustable extent of incident photon energy for DPQW is larger than for a square one of a similar size. Our results are helpful in experiments and device fabrication.

Keywords: double parabolic quantum well electronic intersubband optical absorption three energy levels

Received: 11 August 2017
Revised: 30 September 2017
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.20.At	(Surface states, band structure, electron density of states)
	73.21.Fg	(Quantum wells)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274098).

Corresponding Authors: Shi-Liang Ban
E-mail: slban@imu.edu.cn

About author: 71.55.Eq; 73.20.At; 73.21.Fg; 78.20.Ci

Cite this article:

Shu-Fang Ma(马淑芳), Yuan Qu(屈媛), Shi-Liang Ban(班士良) Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_1-xAs/Al_yGa_1-yAs 2018 Chin. Phys. B 27 027103

[1]	Tien N T, Hung N N T, Nguyen T T and Thao P T B 2017 Physica B 519 63
[2]	Zheng W M, Li S M, Cong W Y, Wang A F, Li B and Huang H B 2016 Chin. Phys. B 25 047302
[3]	Restrepo R L, Ungan F, Kasapoglu E, Mora-Ramos M E, Morales A L and Duque C A 2015 Physica B 457 165
[4]	Liu D F, Cheng Y and He J F 2015 Superlatt. Microstruct. 86 313
[5]	Kuo D M T, Fang A and Chang Y C 2001 Inf. Phys. Technol. 42 433
[6]	Someya T, Hoshino K, Harris J C, Tachibana K and Arakawa Y 2000 Appl. Phys. Lett. 77 1336
[7]	Campman K L, Maranowski K D, Schmidt H, Imamoglu A and Gossard A C 1999 Physica E 5 16
[8]	Kotani T, Arita M, Hoshino K and Arakawa Y 2016 Appl. Phys. Lett. 108 052102
[9]	Alves F D P, Karunasiri G, Hanson N, Byloos M, Liu H C, Bezinger A, Buchanan M 2007 Inf. Phys. Technol. 50 182
[10]	Li J, Kolokolov K, Ning C Z, Larraber D C, Khodaparast G A, Kono J, Ueda K, Nakajima Y, Sasa S and Inoue M 2003 Mater. Res. Soc. 744 M9.2.1
[11]	Manasreh M O, Szmulowicz F, Fischer D W, Evans K R and Stutz C E 1990 Appl. Phys. Lett. 57 1790
[12]	Liu D F, Wang E X and Guo K X 2017 Physica E 86 64
[13]	Ozturk E 2017 Optik 139 256
[14]	Zhu J, Ha S H and Ban S L 2013 Superlatt. Microstruct. 56 92
[15]	Aziz Aghchegala V L, Mughnetsyan V N and Kirakosyan A A 2011 Superlatt. Microstruct. 49 1
[16]	Gu Z, Zhu Z N, Wang M M, Wang Y Q, Wang M S, Qu Y and Ban S L 2017 Superlatt. Microstruct. 102 391
[17]	Phuc H V and Tung L V 2014 Superlatt. Microstruct. 71 124
[18]	Yu X Q and Yu Y B 2013 Superlatt. Microstruct. 62 225
[19]	Li Q, Qu Y and Ban S L 2017 Acta. Phys. Sin. 66 077301(in Chinese)
[20]	B A Ebrahimipour, Askari H R and Ramezani A B 2016 Superlatt. Microstruct. 97 495
[21]	Al E B, Ungan F, Yesilgul U, Kasapoglu E, Sari H and Sökmen I 2015 Opt. Mater. 47 1
[22]	Solaimani M, Morteza I and Arabshahi H 2013 J. Lumin. 134 699
[23]	Karimi M J and Keshavarz A 2011 Superlatt. Microstruct. 50 572
[24]	Miranda G L, Mora-Ramos M E and Duque C A 2011 Physica B 50 350
[25]	Eseanu N 2010 Phys. Lett. A 374 1278
[26]	Chen B, Guo K X, Wang R Z, Zheng Y B and Li B 2008 Eur. Phys. J. B 66 227
[27]	Keshavarz A and Karimi M J 2010 Phys. Lett. A 374 2675
[28]	Sari H, Kasapoglu E, Sakiroglu S, Yesilgul U, Ungand F and Sökmen I 2017 Physica E 90 214
[29]	Safarpour G, Zamani A, Izadi M A and Ganjipour H 2014 J. Lumin. 147 295
[30]	Mora-Ramos M E, Duque C A, Kasapoglu E, Sari H and Sökmen I 2013 J. Lumin. 135 301

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Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1-yAs

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Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_1-xAs/Al_yGa_1-yAs