Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation

doi:10.1088/1674-1056/27/1/018502

Abstract A method to improve Ge n⁺/p junction diode performance by excimer laser annealing (ELA) and epitaxial Si passivation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n⁺/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5×10⁶ beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n⁺/p diode are beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.

Keywords: epitaxial Si passivation excimer laser annealing Ge n⁺/p junction

Received: 28 June 2017
Revised: 22 September 2017
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	81.65.Rv	(Passivation)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Fund: Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant No. YKJ16012R).

Corresponding Authors: Chen Wang
E-mail: chenwang@xmut.edu.cn

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Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军) Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation 2018 Chin. Phys. B 27 018502

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[1]	Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.

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Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation

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Improved performance of Ge n⁺/p diode by combining laser annealing and epitaxial Si passivation