Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (1): 018502    DOI: 10.1088/1674-1056/27/1/018502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
Chen Wang(王尘)1, Yihong Xu(许怡红)2, Cheng Li(李成)3, Haijun Lin(林海军)1
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

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