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Chin. Phys. B, 2017, Vol. 26(12): 127308    DOI: 10.1088/1674-1056/26/12/127308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles

Jin-Xian Qu(屈晋先)1, Su-Qing Duan(段素青)2, Ning Yang(杨宁)2
1. Beijing Computational Science Research Center, Beijing 100193, China;
2. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
Abstract  We analyze the dynamic localization of two interacting electrons induced by alternating current electric fields in triple quantum dots and triple quantum dot shuttles. The calculation of the long-time averaged occupation probability shows that both the intra-and inter-dot Coulomb interaction can increase the localization of electrons even when the AC field is not very large. The mechanical oscillation of the quantum dot shuttles may keep the localization of electrons at a high level within a range if its frequency is quite a bit smaller than the AC field. However, the localization may be depressed if the frequency of the mechanical oscillation is the integer times of the frequency of the AC field. We also derive the analytical condition of two-electron localization both for triple quantum dots and quantum dot shuttles within the Floquet formalism.
Keywords:  dynamic localization      quantum dot shuttles  
Received:  08 May 2017      Revised:  16 August 2017      Accepted manuscript online: 
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  74.55.+v (Tunneling phenomena: single particle tunneling and STM)  
  73.23.Hk (Coulomb blockade; single-electron tunneling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11204016).
Corresponding Authors:  Ning Yang     E-mail:  yang_ning@iapcm.ac.cn

Cite this article: 

Jin-Xian Qu(屈晋先), Su-Qing Duan(段素青), Ning Yang(杨宁) Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles 2017 Chin. Phys. B 26 127308

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