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Chin. Phys. B, 2017, Vol. 26(11): 117101    DOI: 10.1088/1674-1056/26/11/117101
Special Issue: TOPICAL REVIEW — ZnO-related materials and devices
TOPICAL REVIEW—ZnO-related materials and devices Prev   Next  

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

Bing-Sheng Li(李炳生)1, Zhi-Yan Xiao(肖芝燕)2, Jian-Gang Ma(马剑刚)2, Yi-Chun Liu(刘益春)2
1. Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China;
2. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China
Abstract  

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

Keywords:  wide band gap semiconductor      p-ZnO      Zn3N2      thermal oxidation  
Received:  04 May 2017      Revised:  15 June 2017      Accepted manuscript online: 
PACS:  71.55.Ht (Other nonmetals)  
  72.80.Jc (Other crystalline inorganic semiconductors)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 11474076).

Corresponding Authors:  Yi-Chun Liu     E-mail:  ycliu@nenu.edu.cn

Cite this article: 

Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春) The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors 2017 Chin. Phys. B 26 117101

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