Improvement of sensitivity of graphene photodetectorby creating bandgap structure

doi:10.1088/1674-1056/26/11/116803

Abstract

Graphene has aroused large interest in optoelectronic applications because of its broad band absorption and ultrahigh electron mobility. However, the low absorption of 2.3% seriously limits its photoresponsivity and restricts the relevant applications. In this paper, a method to enhance the sensitivity of graphene photodetector is demonstrated by introducing electron trapping centers and creating a bandgap structure in graphene. The carrier lifetime obviously increases, and more carriers are collected by the electrodes. Compared with intrinsic graphene detector, the defective graphene photodetector possesses high photocurrent and low-driving-voltage, which gives rise to great potential applications in photodetector area.

Keywords: graphene photodetector photocurrent bandgap

Received: 18 June 2017
Revised: 29 July 2017
Accepted manuscript online:

PACS:	68.65.Pq	(Graphene films)
	78.67.Wj	(Optical properties of graphene)
	81.05.ue	(Graphene)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 51271210), the Chongqing Municipal Research Program of Basic Research and Frontier Technology, China (Grant No. cstc2015jcyjBX0039), and the Foundation for the Creative Research Groups of Higher Education of Chongqing Municipality, China (Grant No. CXTDX201601016).

Corresponding Authors: Peng Yu, Da-Hua Zhou
E-mail: pengyu@cqnu.edu.cn;zhoudahua@cigit.ac.cn

Cite this article:

Ni-Zhen Zhang(张倪侦), Meng-Ke He(何孟珂), Peng Yu(余鹏), Da-Hua Zhou(周大华) Improvement of sensitivity of graphene photodetectorby creating bandgap structure 2017 Chin. Phys. B 26 116803

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Improvement of sensitivity of graphene photodetectorby creating bandgap structure

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