Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (10): 107301    DOI: 10.1088/1674-1056/26/10/107301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨)
School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn