Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (10): 107101    DOI: 10.1088/1674-1056/26/10/107101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
Zhan-Wei Shen(申占伟)1, Feng Zhang(张峰)1,3, Sima Dimitrijev2, Ji-Sheng Han(韩吉胜)2, Guo-Guo Yan(闫果果)1, Zheng-Xin Wen(温正欣)1, Wan-Shun Zhao(赵万顺)1, Lei Wang(王雷)1, Xing-Fang Liu(刘兴昉)1, Guo-Sheng Sun(孙国胜)1,3, Yi-Ping Zeng(曾一平)1,3
1. Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China;
2. Queensland Micro-and Nano-technology Center, Griffith University, Nathan 4111, Australia;
3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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