Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (9): 098505    DOI: 10.1088/1674-1056/26/9/098505
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
Wei-Wei Yan(闫薇薇)1,2, Lin-Chun Gao(高林春)1,2, Xiao-Jing Li(李晓静)1,2, Fa-Zhan Zhao(赵发展)1,2, Chuan-Bin Zeng(曾传滨)1,2, Jia-Jun Luo(罗家俊)1,2, Zheng-Sheng Han(韩郑生)1,2
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

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