Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (9): 097104    DOI: 10.1088/1674-1056/26/9/097104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Yan Liu(刘艳)1, Zhao-Jun Lin(林兆军)1, Yuan-Jie Lv(吕元杰)2, Peng Cui(崔鹏)1, Chen Fu(付晨)1, Ruilong Han(韩瑞龙)1, Yu Huo(霍宇)1, Ming Yang(杨铭)1
1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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