Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (9): 098504    DOI: 10.1088/1674-1056/26/9/098504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs
Jianfei Li(李建飞)1,2, Yuanjie Lv(吕元杰)2, Changfu Li(李长富)1, Ziwu Ji(冀子武)1, Zhiyong Pang(庞智勇)1, Xiangang Xu(徐现刚)3, Mingsheng Xu(徐明升)4
1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
3 Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;
4 School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China

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