Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

doi:10.1088/1674-1056/26/9/098503

Abstract Solid reactions between Ni and relaxed Si_0.7Ge_0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si_0.7Ge_0.3 interface to the total layer of Ni₂Si_0.7Ge_0.3, and finally accumulated at the surface of NiSi_0.7Ge_0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al.

Keywords: germanosilicide Al Ni

Received: 17 March 2017
Revised: 21 May 2017
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)

Fund: Project supported by the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1418300) and the National Natural Science Foundation of China (Grant Nos. 61604094 and 61306126).

Corresponding Authors: Yun-Xia Ping, Bo Zhang
E-mail: xyping@sues.edu.cn;bozhang@mail.sim.ac.cn

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Xiao-Ran Meng(孟骁然), Yun-Xia Ping(平云霞), Wen-Jie Yu(俞文杰), Zhong-Ying Xue(薛忠营), Xing Wei(魏星), Miao Zhang(张苗), Zeng-Feng Di(狄增峰), Bo Zhang(张波), Qing-Tai Zhao(赵清太) Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing 2017 Chin. Phys. B 26 098503

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Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing

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