Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (9): 097301    DOI: 10.1088/1674-1056/26/9/097301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants
Chang-Sheng Li(李长生), Lei Ma(马磊), Jie-Rong Guo(郭杰荣)
Department of Physics and Electronic Sciences, Hunan University of Arts and Science, Changde 415000, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn