Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (8): 087311    DOI: 10.1088/1674-1056/26/8/087311
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
Yangfeng Li(李阳锋)1,2, Yang Jiang(江洋)1,2, Junhui Die(迭俊珲)1,2, Caiwei Wang(王彩玮)1,2, Shen Yan(严珅)1,2, Ziguang Ma(马紫光)1,2, Haiyan Wu(吴海燕)1,2, Lu Wang(王禄)1,2, Haiqiang Jia(贾海强)1,2, Wenxin Wang(王文新)1,2, Hong Chen(陈弘)1,2
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

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